Con il comunicato stampa di seguito allegato, Samsung Electronics ha annunciato l'avvio della produzione in volumi di chip di memoria DRAM di tipo Low-Power DDR2 (LPDDR2) da 4Gb con l'ausilio di un processo di fabbricazione basato sulla tecnologia a 30nm. La nuova memoria LPDDR2 di Samsung è finalizzata all'impiego nei sistemi mobile, come smartphone e tablet PC.
L'elevato livello di integrazione dei dispositivi, frutto del processo a 30nm, ha permesso di ridurre in maniera significativa sia le dimensioni del chip che il suo consumo di potenza rispetto a quelli della stessa tipologia di DRAM relativa però alla generazione precedente (la capacità in questo caso è pari a 2Gb, ndr). Più in dettaglio, le nuove soluzioni di Samsung hanno un package la cui altezza è diminuita del 20% (da 1mm a 0.8mm) e consumano il 25% in meno di potenza elettrica.
In accordo al produttore, le nuove memorie LPDDR2 a 30nm lavorano con un bit-rate pari a 1.066Mbps; infine, Samsung ha già annunciato il prossimo inizio della produzione di moduli LPDDR2 da 1GB (2x4Gb) e da 1GB (4x4Gb) ottenuti con la stessa tecnologia.
Samsung Electronics Co., Ltd, a global leader in advanced semiconductor technology solutions, announced today that it started the industry’s first production of four gigabit (Gb), low power double-data-rate 2 (LPDDR2) DRAM using 30 nanometer (nm) class* technology earlier this month. The mobile DRAM chip will help the market to deliver thinner, lighter smartphones, tablets and other mobile devices, with longer
battery life, at a level unachievable until now.
"Mass production of 4Gb LPDDR2 is a tremendous advancement for the mobile industry, one that will enable our OEM customers to move quickly in launching better differentiated high-performance mobile devices into the market," said Wanhoon Hong, executive vice president, memory sales & marketing, Samsung Electronics. "Samsung will continue to take the initiative in accelerating growth of the market by providing high-performance, high-density green memory products as often and as early as possible."
Samsung developed the 4Gb LPDDR2 DRAM in December of last year and began mass producing it earlier this month. Compared to the previous 40nm-class* 2Gb LPDDR2 DRAM, the 30nm-class 4Gb LPDDR2 DRAM increases productivity by 60 percent.
The new chip also combines high performance and energy efficiency. It delivers a data transmission speed of 1,066Mbps, which is more than double that of today’s MDDR, which operates between 333 to 400Mbps.
In addition, the chip enables a thinner, memory solution. When creating a 1GB (8Gb) LPDDR2 package with the previously highest density chips of 2Gb, four chips had to be stacked together. With the new 4Gb LPDDR2, stacking only two chips will achieve the same density, while providing a 20 percent package height reduction from 1.0mm to 0.8mm. It also consumes 25 percent less power.
Samsung plans to produce the 4Gb LPDDR2 chip based 1GB (8Gb) packages beginning this month, and plans to produce 2GB (16Gb) packages consisting of four 4Gb devices next month to accommodate a growing need for high-density mobile DRAM solutions.
Samsung expects that the new 4Gb LPDDR2 based solutions will benefit mobile device makers greatly as they launch competitive products using dual-core processors, which require mobile memory with higher performance and density.
According to iSuppli, shipments of mid to high-end smartphones will increase at about an 18 percent annual rate, from 2009 to 2014. This is expected to lead to dramatic expansion in the use of mobile DRAM, which iSuppli projected will grow at an annual rate of 64 percent during the same period.
News Source: Samsung Electronics Press Release
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