Micron Technology ha annunciato il prossimo inizio della produzione in volume dei chip di memoria RAM DDR3 più veloci al mondo. Realizzati con un processo di fabbricazione a 30nm, i nuovi chip sono disponibili in due differenti densità (2Gb e 4Gb) e possono vantare una frequenza di clock fisica pari a 1066MHz, equivalente quindi in valore effettivo a 2133MHz.
In accordo al produttore, i nuovi chip di DDR3, o meglio di DDR3-2133, sono stati progettati per l'impiego in due differenti settori: le schede grafiche discrete orientate al mainstream, da un lato, e il networking high-performance, dall'altro.
La produzione in volumi delle nuove DDR3 avrà inizio nel corso dell'estate.
Micron Technology, Inc. (Nasdaq:MU), one of the world's leading providers of advanced semiconductor solutions, today introduced a new class of 1GHz, 2-gigabit (Gb) and 4Gb, 30-nanometer (nm) DDR3 devices, strengthening the company's comprehensive DDR3 portfolio. Designed for the high- performance networking and discrete graphics markets, the new devices feature industry-leading low power use while delivering speeds up to 2133 megatransfers per second (MT/s).
Micron supports its customers in highly competitive market segments with a broad portfolio of DRAM and nonvolatile memory devices that meet the demand for high-performance, cost-efficient memory solutions. "Micron has been successful in creating a complete DRAM portfolio, and this product offering rounds out the broadest DRAM offering in the industry," said Mike Howard, senior principal analyst, DRAM and Memory at iSuppli.
Optimized for the demanding, performance-driven discrete graphics and high-speed networking markets, the new DDR3 devices provide the latest SoCs/GPUs with ever-increasing bandwidth required for this space. Industry-leading suppliers AMD and LSI are among the latest technology and IP partners for these products, both having worked closely with Micron throughout the development process. Micron relies on its ecosystem partnerships to deliver greater product reliability and compatibility, which, in turn, optimizes customers' time to market and design costs.
"Massive data growth continues to tax storage and networking equipment, and contending with that growth requires high-performance memory interfaces to meet system bandwidth requirements," said Harold Gomard, SerDes and DDR IP Product Manager, LSI. "Micron's broad memory product line and support for 1GHz DDR3 memory in 2 and 4Gb-based modules enables LSI to meet the needs of enterprise and cloud networking and storage customers."
"We continue to build an aggressive portfolio for the performance-focused graphics market," said Matt Skynner, corporate vice president and general manager, AMD Graphics. "With Micron's new DDR3 devices we expect to drive even more performance."
In addition to components that satisfy both the discrete graphics and networking segments, Micron will offer 2133 megatransfers per second (MT/s) module form factors, including networking-specific ECC UDIMMs.
"High-speed DDR3 will be powering the mainstream graphics and high-performance networking markets in 2012 and beyond. Micron is prepared to support these demanding markets by leveraging our expertise with high-volume, cost-efficient DDR3 products and developing these very high-performance DDR3 devices," said Robert Feurle, vice president of DRAM marketing for Micron. "The combination of our advanced process technology and our commitment to the graphics and high-end computing markets has proven highly successful, and these new 30nm 2Gb and 4Gb DDR3 products will continue to deliver on that promise."
Samples of Micron's new class of high-performance, low-power DDR3 devices are available now, with volume production ramping by summer. For more information, please visit www.micron.com.
News Source: Micron Technology Press Release
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